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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2838 DESCRIPTION With MT-200 package Fast switching speed Wide area of safe operation APPLICATIONS For high frequency power amplifiers, audio power amplifiers,switching regulators and DC-DC converters application PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings (Ta=25C) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER CHA IN Collector current Collector-base voltage E SEM NG Open base OND IC CONDITIONS TOR UC VALUE 150 150 5 12 UNIT V V V A W ae ae Open emitter Collector-emitter voltage Emitter-base voltage Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 120 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC2838 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 150 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5 A; IB=0.5 A 1.8 V ICBO Collector cut-off current VCB=140V; IE=0 50 |I A IEBO Emitter cut-off current VEB=5V; IC=0 50 |I A hFE DC current gain IC=3A ; VCE=4V 60 fT Transition frequency IC=1A ; VCE=10V CHA IN E SEM NG OND IC TOR UC 70 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2838 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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